CMPA2560025F - Wolfspeed / Cree

Mfr. #:
CMPA2560025F
Description:
RF Amplifier GaN MMIC Power Amp 2.5-6.0GHz, 25 Watt
Lifecycle:
New from this manufacturer.
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Specifications

Moisture Sensitive: Yes
RoHS: Y
Subcategory: Wireless & RF Integrated Circuits
Packaging: Waffle
Series: TGA
Mounting Style: SMD/SMT
Product Category: RF Amplifier
Product Type: RF Amplifier
Manufacturer: Qorvo
Brand: Qorvo
Package / Case: QFN-EP-28
Type: Power Amplifier
Operating Frequency: 8.5 GHz
NF - Noise Figure: 7.5 dB
Operating Supply Voltage: 6 V
Frequency Range: 5.9 GHz to 8.5 GHz
OIP3 - Third Order Intercept: 35 dBm
P1dB - Compression Point: 34 dBm
Pd - Power Dissipation: 18.5 W
Gain: 18 dB
Part # Aliases: 1072838
Factory Pack Quantity: 50
Number of Channels: 1 Channel
Operating Supply Current: 1 A
Minimum Operating Temperature: - 65 C
Input Return Loss: - 10 dB
Maximum Operating Temperature: + 150 C

More Information

GaN HEMT based MMICs
Cree GaN (Gallium Nitride) HEMT (High Electron Mobility Transistor) based MMICs (monolithic microwave integrated circuits) enable extremely wide bandwidths to be achieved in small footprint packages. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors.Learn More

CMPA2560025F Price & Stock

Wolfspeed CMPA2560025F pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-KeyCMPA2560025F-ND1165088.435088.435088.435088.435088.432020-01-16T20:39:22Z
Richardson RFPDCMPA2560025F365091.625091.625091.625091.625091.622020-01-18T02:23:12Z

Alternate Names

Wolfspeed has several brands around the world that may have alternate names for CMPA2560025F due to regional differences or acquisition. CMPA2560025F may also be known as the following names:

AD5242BRUZ1M distributor

CMPA2560025F Wolfspeed / Cree | Mouser
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Wolfspeed's CMPA2560025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).