- Mfr. #:
- IXFH6N120P
- Description:
- MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6A
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
Specifications
| RoHS: | Y |
|---|---|
| Packaging: | Tube |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Configuration: | Single |
| Technology: | Si |
| Type: | Polar HiPerFET Power MOSFET |
| Transistor Polarity: | N-Channel |
| Subcategory: | MOSFETs |
| Product Type: | MOSFET |
| Product Category: | MOSFET |
| Manufacturer: | IXYS |
| Brand: | IXYS |
| Series: | IXFH6N120 |
| Tradename: | HiPerFET |
| Channel Mode: | Enhancement |
| Qg - Gate Charge: | 92 nC |
| Typical Turn-Off Delay Time: | 60 ns |
| Id - Continuous Drain Current: | 6 A |
| Width: | 5.3 mm |
| Vgs th - Gate-Source Threshold Voltage: | 5 V |
| Vgs - Gate-Source Voltage: | 30 V |
| Factory Pack Quantity: | 30 |
| Forward Transconductance - Min: | 3 S |
| Pd - Power Dissipation: | 250 W |
| Typical Turn-On Delay Time: | 24 ns |
| Height: | 21.46 mm |
| Rds On - Drain-Source Resistance: | 2.75 Ohms |
| Length: | 16.26 mm |
| Fall Time: | 14 ns |
| Rise Time: | 11 ns |
| Vds - Drain-Source Breakdown Voltage: | 1.2 kV |
| Transistor Type: | 1 N-Channel |
| Number of Channels: | 1 Channel |
| Unit Weight: | 0.056438 oz |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
More Information
- Electrical Vehicle DC Fast Chargers
- DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
IXFH6N120P Price & Stock
IXYS IXFH6N120P pricing and available inventory.
| Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
|---|---|---|---|---|---|---|---|---|
| Digi-Key | IXFH6N120P-ND | 20 | 59.77 | 53.98 | 42.68 | 33.89 | 33.89 | 2020-01-16T20:39:22Z |
| Mouser | 747-IXFH6N120P | 1,567 | 72.13 | 64.98 | 49.12 | 44.85 | 44.85 | 2020-01-22T23:48:26Z |
| TME | IXFH6N120P | 60 | 51.63 | 41.03 | 36.89 | 36.89 | 36.89 | 2020-01-23T10:11:50Z |
| Dana Microsystems | IXFH6N120P | 594 | - | - | - | - | - | 2020-01-18T23:04:15Z |
| Abacus Technologies | IXFH6N120P | 400 | - | - | - | - | - | 2019-12-06T00:07:36Z |
| North Star Micro | IXFH6N120P | Contact | - | - | - | - | - | 2015-05-20T05:52:12Z |
| Sierra IC | IXFH6N120P | Contact | - | - | - | - | - | 2019-12-16T00:48:56Z |
Alternate Names
IXYS has several brands around the world that may have alternate names for IXFH6N120P due to regional differences or acquisition. IXFH6N120P may also be known as the following names:
- IXYS CORPORATION
- IXY
- IXYS CORP
- IXYS SEMICONDUCTOR
- IXYS Integrated Circuits Division
- IXYS Integrated Circuits/Clare
- IXYS GMBH
- IXYS-DIRECTED ENERGY
- IXYS Integrated Circuits Division Inc
- IXYS SEMICONDUCTOR GMBH
- IXYS (VA)
- IXYS CORPO
- IXYS Semiconducter GmbH
- IXYS SEMICONDUCTOR CORP
- IXYS INTEGCIRCUITS DIV(CLARE)
- IXYS Colorado (IXYS RF Division)
- IXYS SEMICOND
- IXYS Integrated Circuits
- Zilog/IXYS
- IXYSCOR
- Clare/LXYS Corporation
- IXYS-RF
- CP CLAIRE
- Clare (IXYS)
- IXYS CORPORATION|V
AD5242BRUZ1M distributor
- IXFA6N120P IXFP6N120P IXFH6N120P - Littelfuse
- IXFH6N120P IXYS | Discrete Semiconductor Products | DigiKey
- IXFH6N120P IXYS | MouserIXFH6N120 IXYS | Mouser
- IXFH6N120P Datasheet, Equivalent, Power MOSFET.
- IXFH6N120P in Tube by Littelfuse | Mosfets | Future Electronics
- IXFH6N120P Datasheet(PDF) - IXYS Corporation
- IXFH6N120P IXYS - Transistor: N-MOSFET | unipolar; 1.2kV
- Oct 15, 2020
- IXFH6N120P - IXYS | X-ON
- IXFH6N120 from IXYS - Electronics Datasheets