Mfr. #:
NE4210S01
Description:
RF JFET Transistors Super Lo Noise HJFET
Lifecycle:
New from this manufacturer.
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Specifications

RoHS: Y
Subcategory: Transistors
Mounting Style: SMD/SMT
Package / Case: S0-1
Product Type: RF JFET Transistors
Product Category: RF JFET Transistors
Product: RF JFET
Transistor Polarity: N-Channel
Transistor Type: HFET
Type: GaAs HFET
Technology: GaAs
Brand: CEL
Manufacturer: CEL
Id - Continuous Drain Current: 70 mA
Forward Transconductance - Min: 55 mS
Vds - Drain-Source Breakdown Voltage: 4 V
Pd - Power Dissipation: 165 mW
Gain: 13 dB
Operating Frequency: 12 GHz
Factory Pack Quantity: 1
NF - Noise Figure: 0.5 dB
Vgs - Gate-Source Breakdown Voltage: - 3 V
Maximum Operating Temperature: + 125 C

More Information

OMO is a global distributor of hard-to-find and obsolete parts.
NE4210S01 is available at OMO Electronic.We can offer NE4210S01 for competitive price in the global market, please send us a quotation request for pricing.

NE4210S01 Price & Stock

CEL NE4210S01 pricing and available inventory.

Alternate Names

CEL has several brands around the world that may have alternate names for NE4210S01 due to regional differences or acquisition. NE4210S01 may also be known as the following names:

  • CALIFORNIA EASTERN LABS
  • California Eastern Laboratories
  • CALIFORNIA EASTERN LAB
  • NEC/CEL
  • CEL CALIFORNIA EASTERN LABS
  • CEL-NEC
  • CEL CALIFORNIA EASTERN LABS (VA)
  • California Eastern Laboratories (CEL)
  • CEL (VA)
  • CALIFORNIA EASTERN LABORATORIE
  • California Eastern Laboratories Inc
  • CEL CALIFORNIA EASTERN LABORATORIES
  • California Eastern Labs (CEL/NEC)

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